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Photovoltaic properties of silicon nanocrystals in silicon carbide

: Löper, P.; Witzky, A.; Hartel, A.; Gutsch, S.; Hiller, D.; Goldschmidt, J.C.; Janz, S.; Glunz, S.W.; Zacharias, M.


Freundlich, A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Physics, simulation, and photonic engineering of photovoltaic devices : 23 - 26 January 2012, San Francisco, California
Bellingham, WA: SPIE, 2012 (Proceedings of SPIE 8256)
ISBN: 978-0-8194-8899-2
Paper 82560G
Conference "Physics, Simulation, and Photonic Engineering of Photovoltaic Devices" <2012, San Francisco/Calif.>
Fraunhofer ISE ()

Silicon nanocrystal quantum dots in a dielectric matrix form a material with higher band gap than silicon, but still compatible with silicon technology. So far, devices using silicon nanocrystals have been realized either on silicon wafers, or using in-situ doping in the superlattice deposition which may hinder the nanocrystal formation. In this paper, a vertical PIN device is presented which allows to investigated the electrical and photovoltaic properties of nanocrystal quantum dot layers. The device structure circumvents any influence of a substrate wafer or dopants and provides full flexibility in the material choice of both, i.e. electron and hole, contacts. Furthermore, not-high-temperature stable contact materials can be applied. Devices have been realized using SiC/Si nanocrystal multilayers as the i-region and doped a-Si xC 1-x:H layers as electron and hole contacts. First devices show open-circuit voltage of up to 400mV.