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Surface contamination of silicon wafer after acidic texturisation

: Oltersdorf, A.; Moldovan, A.; Bayer, M.; Zimmer, M.; Rentsch, J.

Volltext urn:nbn:de:0011-n-2066184 (315 KByte PDF)
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Erstellt am: 20.12.2014

Mertens, P. ; Interuniversity Micro-Electronics Center -IMEC-, Louvain:
Ultra clean processing of semiconductor surfaces X : Selected, peer reviewed papers from the 10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 20 - 22, 2010, Ostend, Belgium
Durnten-Zurich: TTP, 2012 (Solid state phenomena 187)
ISBN: 978-3-03-785388-7
ISSN: 1012-0394
International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) <10, 2010, Ostende>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Messtechnik und Produktionskontrolle; Produktionsanlagen und Prozessentwicklung

The acidic texture bath that is commonly used in crystalline silicon solar cell manufacturing is a mixture of HF/HNO 3/H 2O [1]. While the influences of metal contamination on silicon wafer surfaces as well as several cleaning methods were intensively investigated in the previous 30 years [2] the effect of metal contaminations in texturisation baths has not yet been studied intensively. There are two categories of contaminations.