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Analysis of EUV mask multilayer defect printing characteristics

: Erdmann, A.; Evanschitzky, P.; Bret, T.; Jonckheerec, R.


Naulleau, P.P. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Extreme Ultraviolet (EUV) Lithography III : February 2012, San Jose, California, USA
Bellingham, WA: SPIE, 2012 (Proceedings of SPIE 8322)
ISBN: 978-0-8194-8978-4
Paper 83220E
Conference "Extreme Ultraviolet (EUV) Lithography" <3, 2012, San Jose/Calif.>
Fraunhofer IISB ()

Defects below and inside multilayers of EUV masks belong to the most critical concerns for the application of EUV lithography in manufacturing processes. These defects are difficult to inspect and to repair. Moreover, they may print at different focus positions. The paper employs fully rigorous electromagnetic field simulations to investigate the printing characteristics of such defects under various process conditions. Selected simulation results are compared to experimental data. Additional simulations demonstrate possible defect repair strategies.