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A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

 
: Schwantuschke, Dirk; Haupt, C.; Kiefer, R.; Brueckner, Peter; Seelmann-Eggebert, M.; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger

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International journal of microwave and wireless technologies 4 (2012), Nr.3, S.267-274
ISSN: 1759-0795
ISSN: 1759-0787
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
100 nm AlGaN/GaN; dual-gate HEMT; millimeter-wave GaN HEMT; power amplifier; millimeter-wave amplification; V-band; MMIC

Abstract
In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.

: http://publica.fraunhofer.de/dokumente/N-206404.html