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Wafer level approaches for the integration of carbon nanotubes in electronic and sensor applications

: Hermann, S.; Fiedler, H.; Haibo, Y.; Loschek, S.; Bonitz, J.; Schulz, S.E.; Gessner, T.


Institute of Electrical and Electronics Engineers -IEEE-:
9th International Multi-Conference on Systems, Signals and Devices, SSD 2012 : 20 - 23 March 2012; Enhält 4 Teil-Konferenzen: International Conference on Systems, Analysis & Automatic Control (SAC); International Conference on Power Electrical Systems (PES); International Conference on Communication & Signal Processing (CSP); Conference on Sensors, Circuits & Instrumentation Systems (SCI)
New York, NY: IEEE, 2012
ISBN: 978-1-4673-1589-0
ISBN: 978-1-4673-1590-6
5 S.
International Multi-Conference on Systems, Signals and Devices (SSD) <9, 2012, Chemnitz>
Fraunhofer ENAS ()

In this work we give an overview about recent developments in the integration technology of CNTs. We focus on wafer level approaches with the CVD and DEP method for growing as well as depositing CNTs in a defined way. So that we present methods to manipulate CNT growth structure, growth mode as well as growth inhibition in thermal CVD processes. This is highlighted by a unique growth structure opening new possibilities for CNT integration. Likewise, we show recent developments in scaling up the DEP method on wafer level. We round it up with the fabrication of CNT vias and MEMS structures containing CNT sensor elements.