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A critical review on multiscale material database requirement for accurate three-dimensional IC simulation input

: Yeap, K.-B.; Roellig, M.; Huebner, R.; Gall, M.; Sukharev, V.; Zschech, E.


IEEE transactions on device and materials reliability 12 (2012), Nr.2, S.217-224
ISSN: 1530-4388
ISSN: 1558-2574
Fraunhofer IZFP, Institutsteil Dresden ( IKTS-MD) ()

Material behavior and properties at different scales, from nanometers to millimeters, are the input data needed for a model-based design-for- manufacturing approach of 3-D through-silicon-via (TSV) stacked ICs. In particular, mechanical and thermomechanical material data have to be used as input for physics-based modeling and simulation of stress-induced phenomena in 3-D stacks. Both package- and wafer-level properties, including their interaction, have to be considered. This paper reviews the thermomechanical and mechanical properties of several structures: time-dependent properties of solder materials (millimeter and micrometer scales), microstructure-dependent properties of Cu TSVs (micrometer scale), and process-dependent properties of ultralow- k materials in on-chip interconnect stacks (10-nm scale). To minimize the keep-out zone for active devices in the stress-affected surrounding of TSVs, while maintaining the device performance during 3-D TSV stacking of ICs, highly accurate material data are needed as input for the thermomechanical stress simulation. A similar strategy is supposed to be developed for a model-based design-for-reliability approach of 3-D TSV stacked ICs.