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2011
Conference Paper
Titel
Dielectric backside passivation - improvements by dipole optimization
Abstract
Based on an examination of interface effects on negative fixed charge formation in Al2O3 we have been able to attribute the charge centroid to the oxide interface between Al2O3 and SiO2. The formation of negative fixed charge seems strongly related to the presence of oriented Al-O-Si bonds, which induce a dipole, causing the negative charge. Improvement of back side passivation should therefore focus on SiO2 interface optimization.