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Adaptive readout circuit for pinned and lateral drift-field photo diodes

: Süss, Andreas; Hosticka, Bedrich J.; Vogt, Holger

Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin:
PRIME 2012, 8th Conference on Ph.D. Research in Microelectronics & Electronics. CD-ROM : 12-15 June 2012,RWTH Aachen University Germany; Madonna di Campiglio, Trento - Italy
Berlin: VDE-Verlag, 2012
ISBN: 978-3-8007-3442-9
Conference on Ph.D. Research in Microelectronics & Electronics (PRIME) <8, 2012, Aachen>
Fraunhofer IMS ()
pinned photodiode; PPD; lateral drift-field photodetector; LDPD; detector; charge transfer; global shutter; high-speed; CMOS imager

In this work an adaptive pixel architecture is presented that is enabling a fast and complete transfer of photogenerated charges out of the photoactive area towards the storage node. This provides an improved dynamic range. Furthermore, the proposed circuit yields a high-speed shutter capability for global shutter mode. This is mandatory for sensors designed for high frames rate and for high-speed applications where smear effects are to be avoided. The concept is presented examplarily by simulations done for a 96x6 pixel image sensor, which was later on fabricated in a 0.35 µm technology.