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Is GaN the ideal material for space?

: Waltereit, P.

Microwave Technology and Techniques Workshop 2012 : 21-23 May 2012
Noordwijk: ESA Publications Division, 2012
7 S.
Microwave Technology and Techniques Workshop <2012, Noordwijk/Netherlands>
Fraunhofer IAF ()

We report on recent results from our GaN transistor and circuit technology. Epitaxial growth is performed on both SiC and Si substrates in order to provide high-quality AlGaN/GaN heterostructures. These heterostructures are then utilized in order to realize transistors and integrated circuits ranging from high-voltage transistors for voltage conversion in efficient power switches, L/S-band apower bars and X-band MMICs for next generation communication systems, and finally W-band MMICs for radar applications. The technology is characterized by state-of-the-art performance, good uniformity and high yield as well as excellent long-term stability. In combination with the space compatibility we believe that this technology is ideal for space. X-band MMICs from Fraunhofer IAF are scheduled to have the first in-orbit demonstration of European GaN within the Proba-V mission which is planned to be launched towards the end of 2012.