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Fractal structures for low-resistance large area AlGaN/GaN power transistors

 
: Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Walcher, H.; Wagner, S.; Quay, R.; Schlechtweg, M.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; IEEE Power Electronics Society:
ISPSD 2012, 24th International Symposium on Power Semiconductor Devices & ICs. Proceedings : 3-7 June 2012, Bruges, Belgium
Piscataway/NJ: IEEE, 2012
ISBN: 978-1-4577-1594-5 (Print)
ISBN: 978-1-4577-1596-9 (Online)
ISBN: 978-1-4577-1597-6
S.341-344
International Symposium on Power Semiconductor Devices & ICs (ISPSD) <24, 2012, Bruges>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
fractal design; natural flow system; self-similarity; lateral flow structure; gallium nitride

Abstract
This work introduces a new design approach for the use of fractal structures for low-resistance large area transistors structures. Aspects of layout with adapted current density and high-area utilization are considered. Furthermore the work presents a realization of fractal structures in AlGaN/GaN technology. Both static and dynamic behaviors are characterized. The fabricated devices achieve a breakdown voltage of VBR > 700V and on-state currents of ID = 40A at VGS = 1V.

: http://publica.fraunhofer.de/dokumente/N-205476.html