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Unequal pumping of quantum wells in GaN-based laser diodes

 
: Scheibenzuber, W.G.; Schwarz, U.T.

:

Applied physics express 5 (2012), Nr.4, Art. 042103, 2 S.
ISSN: 1882-0778
ISSN: 1882-0786
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()

Abstract
We use rate equation simulations to model the influence of an unequal distribution of injected charge carriers in the quantum wells of GaN-based laser diodes. Therefore, the basic rate equation model is generalized to include multiple independent charge carrier reservoirs that couple to the optical cavity mode. The occurrence of a nonlinear output characteristic is found to be a direct evidence of unequal pumping, and the pumping ratio of the quantum wells can be determined from the magnitude of this nonlinearity.

: http://publica.fraunhofer.de/dokumente/N-205469.html