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Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications

 
: Brueckner, P.; Kiefer, R.; Haupt, C.; Leuther, A.; Müller, S.; Quay, R.; Schwantuschke, D.; Mikulla, M.; Ambacher, O.

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Physica status solidi. C 9 (2012), Nr.3-4, S.903-906
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Conference on Nitride Semiconductors (ICNS) <9, 2011, Glasgow>
Englisch
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
GaN; HEMT; performance; mm-wave

Abstract
In this paper a Gallium Nitride MMIC technology for RF- and microwave and high power amplifiers based on 100 nm gate technology is presented. The MMIC technology includes alloyed ohmic contacts, T-shaped 100 nm gates, air-bridges, MIM capacitors, inductors, and a full through wafer viahole backside process. As a key element for a high MMIC yield, we'll present low ohmic contact resistances with a high yield on several wafers in different processing batches and low leakage currents for a reliable device performance, respectively. Single HEMT performance exhibits PAE values of up to 60 % and power densities of 1.3 W/mm. For a single stage power amplifier with a WG = 4×45 µm dual-gate HEMT configuration, a gain beyond 10 dB at 60 GHz is presented. By using only one transistor for the amplifier stage, a maximum output power of more than 21 dBm and a PAE of 9.3% is achieved.

: http://publica.fraunhofer.de/dokumente/N-205158.html