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GaSb-based semiconductor disk lasers: Recent advances in power scaling and narrow linewidth operation

 
: Wagner, J.; Rattunde, M.; Töpper, T.; Kaspar, S.; Rösener, B.; Manz, C.; Köhler, K.

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Volltext urn:nbn:de:0011-n-2051518 (823 KByte PDF)
MD5 Fingerprint: f50ccf721008f597191b9b8577707bd1
Copyright 2012 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Erstellt am: 15.8.2013


Tropper, Anne C. (Ed.) ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Vertical external cavity surface emitting lasers (VECSELs) II : 23 - 24 January 2012, San Francisco, California, United States; part of SPIE Photonics West
Bellingham, WA: SPIE, 2012 (Proceedings of SPIE 8242)
ISBN: 978-0-8194-8885-5
Paper 82429D
Conference "Vertical External Cavity Surface Emitting Laser" (VECSELs) <2, 2012, San Francisco/Calif.>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IAF ()
infrared semiconductor laser; vertical external cavity surface emitting laser (VECSEL); semiconductor disk laser (SDL); optically pumped semiconductor disk laser (OPSDL); power scaling; single-mode operation

Abstract
The (AlGaIn)(AsSb) semiconductor materials system has been shown to be ideally suited to realize optically pumped Vertical External Cavity Surface Emitting Lasers (VECSELs) for the 2-3 µm wavelength range. For a 2 µm emitting single-chip VECSEL with a ternary GaInSb quantum well active region, employing a linear planar-concave resonator geometry, a maximum continuous wave (cw) output power of 4.2 W at 20°C heatsink temperature (6 W at 0°C) has been achieved. Standard fiber-coupled 980 nm diode lasers have been used for optical barrier pumping. Employing a W-shaped resonator with two optically pumped gain chips acting as planar folding mirrors, a maximum cw output power of 5.5 W has been achieved at a heatsink temperature of 20°C, increasing to 10.4 W when reducing the heatsink temperature to -10°C. The resonator versatility of a VECSEL also allows the insertion of additional optical elements into the optical cavity for wavelength selection and linewidth control. Employing a V-shaped folded cavity with the gain chip acting as the planar end mirror, single-mode operation with a linewidth <100 kHz at 1 W optical output power has been achieved at a lasing wavelength of 2.05 µm.

: http://publica.fraunhofer.de/dokumente/N-205151.html