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High temperature characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-technology

: Grella, Katharina; Dreiner, Stefan; Schmidt, Alexander; Heiermann, Wolfgang; Kappert, Holger; Vogt, Holger; Paschen, Uwe

International Microelectronics and Packaging Society -IMAPS-:
International High Temperature Electronics Conference, HiTEC 2012 : May 8-10, 2012; Albuquerque Marriott Pyramid North, Albuquerque, New Mexico, USA, International Conference and Tabletop Exhibition on High Temperature Electronics 2012
Washington/DC: IMAPS, 2012
International High Temperature Electronics Conference (HiTEC) <2012, Albuquerque/NM>
International Conference and Tabletop Exhibition on High Temperature Electronics <2012, Albuquerque/NM>
Fraunhofer IMS ()
high temperature; silicon-on-insulator; SOI; CMOS; ring oscillator; bandgap reference

Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are currently used up to 250 °C. In this work, we evaluate the limit for electronic circuit function realized in thin film SOI-technologies for even higher temperatures. At Fraunhofer IMS, a versatile 1.0 µm SOI-CMOS process based on 200 mm wafers is in production. It features three layers of tungsten metallization with excellent reliability concerning electromigration, voltage independent capacitors, high resistance resistors, and single-poly-EEPROM cells. In this paper, we present a study of the temperature dependence of MOSFETs and basic circuits, produced in the process described before. The electrical characteristics of NMOSFET- and PMOSFET-transistors were studied up to 450 °C. In a second step, we investigated the functionality of ring oscillators, representing digital circuits, and bandgap references as examples of simple analog components. The frequency and the current consumption of ring oscillators and the output voltage of bandgap references were characterized for temperatures up to 450 °C. We found that the ring oscillator still functions at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the bandgap reference is in the specified range up to 250 °C, and shows reduced performance in the extended temperature range up to 450 °C. The acquired data provide an important foundation to extend the application of CMOS-technology to its real maximum temperature limits.