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Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

 
: Martin, Dominik; Yurchuk, Ekaterina; Muller, Stefan; Muller, Johannes; Paul, Jan; Sundquist, Jonas

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Institute of Electrical and Electronics Engineers -IEEE-:
13th International Conference on Ultimate Integration on Silicon, ULIS 2012 : 6-7 March 2012, Grenoble, France
New York, NY: IEEE, 2012
ISBN: 978-1-4673-0191-6 (Print)
ISBN: 978-1-4673-0190-9 (Online)
S.195-198
International Conference on Ultimate Integration on Silicon (ULIS) <13, 2012, Grenoble>
Englisch
Konferenzbeitrag
Fraunhofer CNT ()

Abstract
Throughout the 22 nm technology node HfO2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time, for dielectric materials like PZT and SrBi2Ta2O9. However, integrating these into contemporary downscaled CMOS technology nodes is not trivial due to the necessity of an extremely thick gate stack. Recent developments have shown HfO2 to have ferroelectric properties given the proper doping. Moreover, these doped HfO2 thin films only require layer thicknesses similar to the ones already in use in CMOS technology. This work will show how the incorporation of Si induces ferroelectricity in HfO2 based capacitor structures and finally demonstrate non-volatile storage in nFeFETs down to a gate length of 100 nm.

: http://publica.fraunhofer.de/dokumente/N-203566.html