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Interactions of dislocations during epitaxial growth of SiC and GaN
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2010
Conference Paper
Titel
Interactions of dislocations during epitaxial growth of SiC and GaN
Author(s)
Friedrich, J.
Kallinger, B.
Berwian, P.
Meissner, E.
Hauptwerk
Crystal growth technology. Semiconductors and dielectrics
Konferenz
International Workshop on Crystal Growth Technology (IWCGT) 2008
DOI
10.1002/9783527632879.ch8
Language
English
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Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB