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Growth behaviours and properties of the ZnO:Al films prepared by reactive mid-frequency magnetron sputtering

: Hong, R.J.; Jiang, X.; Heide, G.; Szyszka, B.; Sittinger, V.; Werner, W.


Journal of Crystal Growth 249 (2003), Nr.3-4, S.461-469
ISSN: 0022-0248
Fraunhofer IST ()
physical vapor deposition process; oxide; zinc compounds

Al-doped zinc oxide (ZnO:Al) films were prepared on float glass substrates by in-line reactive mid-frequency (MF) magnetron sputtering from a Zn-Al metallic target (Al 2 wt%). The influences of working gas pressure and substrate temperature on the crystallization behaviours as well as on the electrical and optical properties of the films were investigated. The films prepared at substrate temperature from 100°C to 200°C exhibit columnar structure, having high carrier concentration, high Hall mobility and good conductivity. The crystallinity of the films was improved and the columnar film growth became more dominant as the working gas pressure increased. The grains of the film prepared at a working gas pressure of 970 mPa and a substrate temperature of 170°C are facetted on the film surface and the grain columns are grown through the entire film. Optical transmittance up to 87% in the visible range and electrical resistivity as low as 2.86×10-4 cm were obtained under these optimal deposition conditions.