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Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer

: Jakob, A.; Vissing, K.-D.; Stenzel, V.

Frontpage ()

DE 2002156247 A: 20021129
WO 2003EP13434 A: 20031128
WO 2004051708 A2: 20040617
Patent, Elektronische Publikation
Fraunhofer IFAM ()

The invention relates to a method and a device for machining wafers, in particular for thinning wafers. The invention also relates to a wafer comprising a support layer and a separation layer that is situated between the support layer and the wafer. Said separation layer is a plasma polymer layer, which adheres to the wafer and adheres to the support layer more strongly than to the wafer.