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2003
Journal Article
Titel
A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE
Alternative
Kompakter koplanarer 4-Watt X-Band Leistungsverstärker MMIC mit 18dB Verstärkerung und 25% PAE
Abstract
The performance of a compact coplanar microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-µm gate-length GaAs power pseudomorphic high electron mobility transistor (PHEMT) process on 4-in wafer, this two-stage amplifier, having a chip size of 16 mm2, averages 4-W continuous-wave (CW) and 25% mean power-added efficiency (PAE) in the X band, with more than 18-dB linear gain. Peak output powers of P(exp -1 dB) = 36.3 dBm (43 W) and P(exp sat) of 36.9 dBm (4.9 W) at 10 GHz with a PAE of 50% were also measured. Compared to previously reported X-band coplanar high-power amplifiers, this represents a chip size reduction of 20%, comparable to the size of compact state-of-the-art microstrip power amplifiers.
Author(s)