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A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE

Kompakter koplanarer 4-Watt X-Band Leistungsverstärker MMIC mit 18dB Verstärkerung und 25% PAE
: Bessemoulin, A.; Quay, R.; Ramberger, S.; Massler, H.; Schlechtweg, M.


IEEE journal of solid-state circuits 38 (2003), Nr.9, S.1433-1437
ISSN: 0018-9200
Fraunhofer IAF ()
high power; amplifier; Leistungsverstärker; HPA; MMIC; GaAS; PHEMT; coplanar waveguide; Koplanarleitung

The performance of a compact coplanar microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-µm gate-length GaAs power pseudomorphic high electron mobility transistor (PHEMT) process on 4-in wafer, this two-stage amplifier, having a chip size of 16 mm2, averages 4-W continuous-wave (CW) and 25% mean power-added efficiency (PAE) in the X band, with more than 18-dB linear gain. Peak output powers of P(exp -1 dB) = 36.3 dBm (43 W) and P(exp sat) of 36.9 dBm (4.9 W) at 10 GHz with a PAE of 50% were also measured. Compared to previously reported X-band coplanar high-power amplifiers, this represents a chip size reduction of 20%, comparable to the size of compact state-of-the-art microstrip power amplifiers.