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Photoconductive THz generation at 1.5 µm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers

: Dietz, R.J.B.; Gerhard, M.; Boettcher, J.; Kuenzel, H.; Koch, M.; Sartorius, B.; Schell, M.


IEEE Microwave Theory and Techniques Society:
36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011 : Houston, Texas, USA, 2 - 7 October 2011
Piscataway/NJ: IEEE, 2011
ISBN: 978-1-4577-0510-6 (Print)
ISBN: 978-1-4577-0508-3 (Online)
ISBN: 978-1-4577-0509-0
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) <36, 2011, Houston/Tex.>
Fraunhofer HHI ()

We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolayer structures with separated trapping and photoconductive layers, the later exhibiting high carrier mobility. The high mobility significantly increases the optical power-to-THz conversion efficiency, while the emitted THz bandwidth exceeds 3 THz.