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AlGaN-based 355 nm UV light-emitting diodes with high power efficiency

: Gutt, R.; Passow, T.; Kunzer, M.; Pletschen, W.; Kirste, L.; Forghani, K.; Scholz, F.; Köhler, K.; Wagner, J.


Applied physics express 5 (2012), Nr.3, Art. 032101, 3 S.
ISSN: 1882-0778
ISSN: 1882-0786
Fraunhofer IAF ()

High-efficiency AlGaN-based 355nm UV light-emitting diodes (LEDs) grown on low-dislocation-density AlGaN/sapphire templates are reported. Flip-chip-mounted mesa LEDs exhibit an output power of 9.8mW (22.7mW) at a DC current of 40mA (100 mA), corresponding to an external quantum efficiency of 7% at 40 mA. Due to the low forward voltage of only 3.8V at 40 mA, this translates into a power efficiency of 6.5% at 40 mA. These performance data have been achieved under optimized growth conditions for the low-In-content (AlGaIn)N single quantum well and a reduced thickness of the absorbing p-GaN top layer.