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Auger effect in nonpolar quantum wells

: Schade, L.; Schwarz, U.T.; Wernicke, T.; Rass, J.; Ploch, S.; Weyers, M.; Kneissl, M.


Chyi, J.-I. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Gallium Nitride Materials and Devices VII : San Francisco, California, USA, January 2012
Bellingham, WA: SPIE, 2012 (SPIE Proceedings Series 8262)
ISBN: 978-0-8194-8905-0
Paper 82620K
Conference "Gallium Nitride Materials and Devices" <7, 2012, San Francisco/Calif.>
Fraunhofer IAF ()
nonpolar; polarization; droop; Auger

Optical polarization properties of nonpolar quantum wells and their efficiency droop at high charge carrier densities are discussed. Therefore, a photoluminescence experiment connecting both characteristics is presented. The additional property of polarization resolution provides information about the two lowest interband transitions and the occupation of holes in the two highest valence subbands. The ratio of occupation in the two subbands is a direct projection of the Fermi-Dirac statistics. Because of the carrier dependency of the Auger losses, the quantum well internal efficiency drops in the high charge carrier regime. Here, we observe that the peak of the internal quantum efficiency of the individual subband occurs at different excitation densities as a direct consequence of the Fermi-Dirac statistics.