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Atomic layer deposited Al2O3 as characterized reference samples for nanolayer metrology

: Nutsch, A.; Lemberger, M.; Petrik, P.


Seiler, D.G. ; American Institute of Physics -AIP-, New York:
Frontiers of Characterization and Metrology for Nanoelectronics 2011 : Grenoble (France), 23-26 May 2011
New York, N.Y.: AIP Press, 2011 (AIP Conference Proceedings 1395)
ISBN: 978-0-7354-0965-1
ISBN: 978-0-7354-0973-6
ISSN: 0094-243X
International Conference on Frontiers of Characterization and Metrology for Nanoelectronics <2011, Grenoble>
Fraunhofer IISB ()

Plasma assisted Atomic Layer Deposition Al(2)O(3) samples were studied using an approach of complementary metrology using Ellipsometry, X-Ray Reflectivity, Atomic Force Microscopy, and Total Reflection X-Ray Fluorescence. For modeling the samples, an interfacial rough SiO(2) layer has to be assumed. The excellent linearity of the ALD process was used to cross check Ellipsometry and X-Ray Reflectivity. In contrast to Ellipsometry, X-Ray Reflectivity showed a residual surface layer, identified as chlorine contaminated layer by TXRF. The samples are shown to be ideal candidates for calibration of X-ray fluorescence as the Al signal linearly depends on the film thickness or ALD cycles. Furthermore, the impact of self-absorption of thick layers for TXRF was shown by the samples.