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Low temperature wafer bonding technologies

: Haubold, M.; Baum, M.; Schubert, I.; Leidich, S.; Wiemer, M.; Gessner, T.

International Microelectronics and Packaging Society -IMAPS-; Institute of Electrical and Electronics Engineers -IEEE-:
18th European Microelectronics and Packaging Conference, EMPC 2011. Proceedings. CD-ROM : Brighton, 12th-15th September 2011
Andover, Hampshire: IMAPS UK, 2011
ISBN: 978-0-9568086-0-8
ISBN: 978-1-4673-0694-2 (Print)
8 S.
European Microelectronics and Packaging Conference (EMPC) <18, 2011, Brighton>
Fraunhofer ENAS ()

This paper will give an overview on up to date research results for wafer bonding technologies using heterogeneous substrate materials and advanced activation treatments. The following descriptions give a short introduction to certain bonding technologies focusing on low processing temperature. As examples direct and anodic bonding technologies were chosen and presented as part of the fabrication process for RF-MEMS. Furthermore the paper will show the theoretical aspects of the single bonding procedure as well as the experiments and the results of the development.