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2011
Conference Paper
Titel
Metrology and Failure Analysis for 3D IC Integration
Abstract
At the same time as research in 3D TSV technology is advancing quickly, the analytical techniques used in the evaluation of 3D stacks must also advance in capability. Microscopy techniques for which silicon is opaque such as scanning acoustic microscopy (SAM) and confocal infrared (IR) microscopy are capable of inspecting the interface between bonded wafer pairs, while high resolution X-ray computed tomography (XCT) is used to detect voids in TSVs. With nano-XCT, voids in copper TSVs with sub-100nm size can be visualized. For more detailed failure characterization, a target Focused Ion Beam (FIB) cross-section through the localized region of interest (defect) and subsequent scanning electron microscopy (SEM) imaging is proposed. Currently, the most important requirement is to reduce the so-called time-to-data, e. g. for defect localization using nano-XCT and for cross-section characterization.