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In-line silicon epitaxy for photovoltaics using a continous chemical vapour deposition reactor

: Keller, M.; Reber, S.; Schillinger, N.; Pocza, D.; Arnold, M.


Journal of nanoscience and nanotechnology 11 (2011), Nr.9, S.8024-8029
ISSN: 1533-4880
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Silicium-Photovoltaik; Kristalline Silicium- Dünnschichtsolarzellen

Thin film solar cell techniques can effectively reduce the costs for photovoltaic solar power. However, most of these techniques still have the disadvantage of a comparatively low efficiency. One way to realize a thin film solar cell concept with high efficiency potential is the crystalline silicon thin-film (cSiTF) concept. Following the high-temperature approach, this concept is based on a silicon epitaxy process. This paper reports the current status of the development of a high throughput epitaxy tool at Fraunhofer ISE and presents first results. Also presented is the development of a simulation tool which is a virtual image of the real setup in order to forecast save deposition conditions. The presented epitaxy tool is the ConCVD (Continuous Chemical Vapour Deposition), in which an improved reactor setup has been installed, based on the experience gained so far. To provide insight into upcoming further advances, the industrial scale epitaxy tool ProConCVD is presented as well.