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20% efficient passivated large-area metal wrap through solar cells on boron-doped Cz silicon

: Lohmüller, E.; Thaidigsmann, B.; Pospischil, M.; Jäger, U.; Mack, S.; Specht, J.; Nekarda, J.; Retzlaff, M.; Krieg, A.; Clement, F.; Wolf, A.; Biro, D.; Preu, R.


IEEE Electron Device Letters 32 (2011), Nr.12, S.1719-1721
ISSN: 0741-3106
ISSN: 0193-8576
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

We present metal wrap through passivated emitter and rear solar cells (MWT-PERC) on monocrystalline p-type silicon featuring laser-doped selective emitter structures in combination with either screen-printed (SP) or more advanced dispensed front side contacts. Thermally grown silicon oxide layers serve as emitter and rear surface passivation. Laser-fired contacts connect the SP aluminum rear contact to the silicon base. The rear side features solder contacts for both polarities. Conversion efficiency values of 20.6% for float-zone and 20.1% for Czochralski-grown silicon (not stabilized) are achieved on large-area cells with 149 cm(2) wafer size. These are within the highest values reported for large-area p-type silicon solar cells to date. Analytical modeling enables a consistent description of the devices and allows for determining the dominating loss mechanisms.