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All-screen-printed 120-µM-thin large-area silicon solar cells applying dielectric rear passivation and laser-fired contacts reaching 18% efficiency

: Gautero, L.; Hofmann, M.; Rentsch, J.; Lemke, A.; Mack, S.; Seiffe, J.; Nekarda, J.; Biro, D.; Wolf, A.; Bitnar, B.; Sallese, J.M.; Preu, R.

Postprint urn:nbn:de:0011-n-1983401 (992 KByte PDF)
MD5 Fingerprint: 02f239537ad4568d00b91e09cc906028
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Erstellt am: 11.8.2012

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
34th IEEE Photovoltaic Specialists Conference, PVSC 2009. Vol.3 : Philadelphia, Pennsylvania, USA, 7 - 12 June 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-2949-3
ISBN: 1-4244-2949-8
ISBN: 978-1-4244-2950-9
Photovoltaic Specialists Conference (PVSC) <34, 2009, Philadelphia/Pa.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

The market need for a lower price per Watt(peak) asks for the development of solar cell designs with a low production cost and a high performance. An approach to reach a high efficiency with a solar cell structure containing a diffused emitter on a p-type silicon wafer is the implementation of a PERC structure on the rear side [1]. This structure gets advantageous to the standard screen printed solar cell when its production cost stays comparable to the latter and offers a higher efficiency [2]. Since this technique can inherently be applied to thinner wafers, an additional advantage comes from the reduced material consumption. The purpose of this work is to introduce a production sequence able to create a PERC structure on thin silicon wafers using steps available in the PV industry or at least close to industrial application. Applying this process on Czochralski (Cz) wafers of 120 mu m thickness, a stable efficiency of 18.0 % was achieved.