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Quantum efficiency determination of a novel CMOS design for fast imaging applications in the extreme ultraviolet

 
: Herbert, Stefan; Banyay, Matus; Maryasov, Alexey; Hochschulz, Frank; Paschen, Uwe; Vogt, Holger; Juschkin, Larissa

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Postprint urn:nbn:de:0011-n-1958900 (378 KByte PDF)
MD5 Fingerprint: 1938de1f40425006a671ac37e9b826da
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Erstellt am: 1.10.2016


IEEE transactions on electron devices 59 (2012), Nr.3, S.846-849
ISSN: 0018-9383
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IMS ()
Fraunhofer ILT ()
defect inspection; extreme ultraviolet (EUV) complementary metal-oxide-semiconductor (CMOS); EUV microscopy; CMOS; Bildsensor; EUV; EUV-L; DOSE; EUV CMOS image sensor

Abstract
We present quantum efficiency (QE) and quantum yield (QY) measurements of novel deep optical stack etching extreme-ultraviolet complementary metal-oxide-semiconductor photodiodes of different sizes and derive future potentials. QE values between 24% and 50% at 13.5 nm were achieved. Variations in QE and QY measurement results were analyzed.

: http://publica.fraunhofer.de/dokumente/N-195890.html