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Electroluminescence efficiency of InGaN light emitting diodes: Dependence on AlGaN:Mg electron blocking layer width and Mg doping profile

Elektrolumineszenzeffizienz von InGaN Leuchtdioden: Abhängigkeit von der Dicke der AlGaN: Mg Elektronenbarriere und dem Mg Dotierprofil
: Stephan, T.; Köhler, K.; Kunzer, M.; Schlotter, P.; Wagner, J.


Physica status solidi. C (2003), Nr.7, S.2198-2201
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
Fraunhofer IAF ()
light emitting diode; Leuchtdiode; diffusion; (AlGaIn)N

The influence of the Mg doping profile on the luminescence performance of InGaN light emitting diodes with an emission wavelength of 395 nm has been investigated. An increased spread of the Mg doping atoms towards the InGaN quantum well active region results in thermal quenching of the photoluminescence and electroluminescence intensity, and thus in a lower output power at 20 mA of the devices at room temperature. Further, the output power-versus current characteristics become increasingly superlinear, indicating that Mg introduces nonradiative recombination centers in the InGaN quantum well active region.