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High-resolution QWIP FPAs for the 8-12 µm and 3-5 µm regimes

Hochauflösende QWIP FPAs für die Bereicht 8-12 µm und 3-5 µm
: Schneider, H.; Fleißner, J.; Rehm, R.; Walther, M.; Pletschen, W.; Koidl, P.; Weimann, G.; Ziegler, J.; Breiter, R.; Cabanski, W.


Andresen, B.F. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Infrared technology and applications XXVIII. Pt.1 : 7 - 11 July 2002, Seattle, Washington, USA
Bellingham/Wash.: SPIE, 2003 (SPIE Proceedings Series 4820)
ISBN: 0-8194-4588-6
Infrared Technology and Applications Conference <28, 2002, Seattle/Wash.>
International Symposium on Optical Science and Technology <2002, Seattle/Wash.>
Fraunhofer IAF ()
QWIP; infrared; Infrarot; GaAs/AlGaAs; thermal imaging camera; Wärmebildkamera; focal plane array; Bildfeldmosaik; noise-equivalent temperature difference; NETD; Rauschäquivalente Temperaturauflösung

We report on our QWIP focal plane array (FPA) developments for the 8 - 12 µm and 3 - 5 µm regimes. In the long-wavelength infrared, we have realized several types of QWIP FPAs with array sizes from 256 x 256 to 640 x 512 pixels and with different active regions, giving rise to photoconductive and photovoltaic operation, respectively. Best thermal resolution in the 8 - 12 µm regime is obtained with low-noise QWIP FPAs which are based on a photovoltaic QWIP structure. Special emphasis is given to our work on a 640 x 512 mid-wave QWIP FPA, which is based on strained InGaAs/AIGaAs quantum wells lattice matched to a GaAs substrate. By optimizing the carrier concentration and the geometry of the two-dimensional grating with 1.65 µm period, a high quantum efficiency of more than 10% in the long-wavelength part of the 3 - 5 µm regime is achieved, resulting in an excellent thermal resolution of only 14.3 mK.