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Asymmetrically - shaped diodes for microwave - submillimeter sensing

Asymmetrisch gestaltete Dioden für Mikrowellen-submillimeter Empfang
 
: Asmontas, S.; Ardavicius, L.; Balakauskas, S.; Gradauskas, J.; Kozic, A.; Kundrotas, J.; Köhler, K.; Roskos, H.G.; Sachs, R.; Suziedelis, A.; Seliuta, D.; Sirmulis, E.; Valusis, G.

Long, A.R.:
Physics of semiconductors 2002 : Proceedings of the 26th International Conference on the Physics of Semiconductors held in Edinburgh, UK, 29 July - 2 August 2002
Bristol: IOP Publishing, 2003 (Institute of Physics - Conference Series 171)
ISBN: 0-7503-0924-5
S.D240
International Conference on the Physics of Semiconductors (ICPS) <26, 2002, Edinburgh>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; heterostructure; Heterostruktur; terahertz spectroscopy; Terahertz Spektroskopie

Abstract
We present a concept and possible applications of asymmetrically-shaped diodes fabricated from different types of semiconductors, i.e. non-uniform GaAs, n-Si and modulation-doped GaAs/Al(0.25)Ga(0.75)As structures. The devices can be used to detect electromagnetic radiation within a very-broad frequency band ranging from 10 GHz up to 2.5 THz (non-uniform GaAs diode) and for very intense pulsed radiation up to 10 kW (in the case of n-Si-based device).

: http://publica.fraunhofer.de/dokumente/N-19487.html