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Flip-chip integration of power HEMTs: A step towards a GaN MMIC technology

Flip-Chip Integration von Leistungstransistoren als erster Schritt in Richtung einer monolithischen GaN Technologie
 
: Seemann, K.; Ramberger, S.; Tessmann, A.; Quay, R.; Schneider, J.; Riessle, M.; Walcher, H.; Kuri, M.; Kiefer, R.; Schlechtweg, M.

GAAS 2003. The European Gallium Arsenide and other Compound Semiconductors Application Symposium : October 6 and 7 2003, in Munich, Germany
London: Horizon House, 2003
S.489-492
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <11, 2003, München>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
flip-chip packaging; Flip-chip Aufbautechnik; SiC; MMIC; PHEMT; coplanar technology; Koplanartechnologie; amplifier circuit; Verstärkerschaltung

Abstract
In this paper, flip-chip integration is demonstrated as a method for faster progress towards a GaN MMIC technology by separating the development of active devices and passive matching circuits. This approach offers distinct advantages in the verification of passive components realized on a 2" SiC substrate. A proven 0.3µm GaAs PHEMT technology was used for the transistors that allowed to reproducibly verify both, the flip-chip transitions and the behaviour of the coplanar SiC structures. As an example, three X-band amplifiers in flip-chip technology are presented that demonstrate the feasibility of the technology.

: http://publica.fraunhofer.de/dokumente/N-19372.html