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Challenges in TCAD simulations of tunneling field effect transistors

Herausforderungen in TCAD-Simulationen von Tunneleffekt-Feldeffekttransistoren
: Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen

Präsentation urn:nbn:de:0011-n-1923698 (1021 KByte PDF)
MD5 Fingerprint: 7c2857b1bdba9ea529118147b95a175e
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Erstellt am: 12.1.2012

Institute of Electrical and Electronics Engineers -IEEE-:
41st European Solid-State Device Research Conference, ESSDERC 2011. Proceedings : Helsinki, September 12 - 16, 2011
Piscataway, NJ: IEEE Service Center, 2011
ISBN: 978-1-4577-0707-0 (Print)
ISBN: 978-1-4577-0706-3 (Online)
ISBN: 978-1-4577-0708-7
European Solid-State Device Research Conference (ESSDERC) <41, 2011, Helsinki>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
field effect; MOS transistor; TCAD simulation; silicon

An extensive comparison of tunneling device simulations versus experimental results is presented. Different tunneling models were used to simulate long channel silicon on insulator tunneling field effect transistors. The results were compared to experimental results, which were taken from the literature. A calibrated parameter set of the dynamic NonLocal-Tunneling model is presented, which qualitatively reproduces the experimental results at different electrostatic potential conditions and physical gate lengths.