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Angular distributions of sputtered silicon at grazing gallium ion beam incidence

Winkelverteilungen von ionengesputtertem Silizium beim streifenden Einfall von Galliumionen
: Burenkov, Alex; Sekowski, Matthias; Belko, Viktor; Ryssel, Heiner

Postprint urn:nbn:de:0011-n-1923662 (461 KByte PDF)
MD5 Fingerprint: 99c05bf2ba851f47c8a250447205ffcc
Erstellt am: 12.1.2012

Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 272 (2012), S.23-27
ISSN: 0168-583X
International Conference on Ion Beam Modification of Materials (IBMM) <17, 2010, Montreal>
Zeitschriftenaufsatz, Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
ion sputtering; angular distribution; silicon; Gallium

Angular distributions of silicon atoms sputtered by gallium ions at grazing incidence were investigated experimentally and by simulation. The energies and the ion beam fluence studied are typical for using focused ion beam techniques for silicon micro-structuring. The angular distributions of the sputtered atoms at grazing ion beam incidence loose their cylindrical symmetry around the target surface normal due to the anisotropy of single collisions and of the collision cascades initiated by the energetic ions. The angular distributions were studied in this work both experimentally and using the simulation methods of Monte-Carlo and of Molecular Dynamics. To study the influence of the surface structure on the angular distributions of the sputtered atoms, different arrangements of silicon at oms on the surface of the targets were tested in simulations using Molecular Dynamics. Monte-Carlo simulations based on the theory of binary collisions were used to complement the experimental results on the angular distributions of sputtered silicon and the final results are presented as an analytical model.