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Narrow linewidth 2 µm GaSb-based semiconductor disk laser

: Rattunde, M.; Kaspar, S.; Rösener, B.; Töpper, T.; Manz, C.; Köhler, K.; Ambacher, O.; Wagner, J.


Institute of Electrical and Electronics Engineers -IEEE-; Optical Society of America -OSA-, Washington/D.C.:
European Conference on Lasers and Electro-Optics and 12th European Quantum Electronics Conference, CLEO Europe/EQEC 2011. Vol.1 : 22 - 26 May 2011, Munich, Germany
New York, NY: IEEE, 2011
ISBN: 978-1-4577-0533-5
ISBN: 978-1-4577-0532-8
European Quantum Electronics Conference (EQEC) <12, 2011, Munich>
European Conference on Lasers and Electro-Optics (CLEO Europe) <2011, Munich>
Fraunhofer IAF ()

In recent years, optically pumped semiconductor disk lasers (OPSDLs) have attracted increasing interest due to their capability of delivering simultaneously high output power and excellent beam quality [1]. Recently, the realization of high-performance OPSDLs based on the (AlGaIn)(AsSb) material system with emission wavelengths ranging from 1.8 to 2.8 m has been reported [2 - 3]. These long-wavelength semiconductor disk lasers are capable of emitting multiple Watt CW-output power (e.g. up to 5 W at 2.0 m [2]) with a multimode emission spectra, making this laser source suitable for direct applications such as material processing and medical therapy. Other applications in this wavelength regime such as spectroscopy, long-range gas sensing (LIDAR) and free-space optical data transmission via phase modulation require narrow linewidth laser sources (sub-MHz regime) with moderately high output power (0.1-1 W range).