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2012
Journal Article
Titel
Trade-offs between performance and reliability in AlGaN/GaN transistors
Abstract
We report on the trade-off between performance and reliability for AlGaN/GaN transistors. It is shown that changes in epitaxial growth, transistor design and process may lead to an improvement in performance but are, at the same time, accompanied by a degradation of device reliability. As a result we show strategies in order to balance performance and reliability as both are linked. Based on these findings we have realized state-of-the-art power bars for mobile communication systems and X-band MMICs for radar applications.
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