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2µm semiconductor disk laser technology

: Rattunde, M.; Kaspar, S.; Töpper, T.; Manz, C.; Köhler, K.; Wagner, J.

Photonex 2011. CD-ROM
Coventry, 2011
2 S.
Photonex <2011, Coventry/UK.>
Fraunhofer IAF ()

Highly efficient GaSb-based semiconductor disk lasers in the 1.9-2.8 µm range have been realized. They reach output powers up to 10 W in CW-operation concomitant with a circular-symmetric low-divergence output beam with a high beam quality (M2 in the range of 1 to 5). By using wavelength intracavity elements, tunable, single-frequency emission was achieved with a heterodyne linewidth below 100 kHz (< 1.3 fm) at 1 W CW-output power.