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1550 nm flip-chip compatible electroabsorption-modulated laser with 40 Gb/s modulation capability

 
: Kreissl, J.; Bornholdt, C.; Gärtner, T.; Mörl, L.; Przyrembel, G.; Rehbein, W.

Institute of Electrical and Electronics Engineers -IEEE-:
Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 : 22-26 May 2011, Berlin
New York, NY: IEEE, 2011
ISBN: 978-1-4577-1753-6
Art. 39, 4 S.
Compound Semiconductor Week (CSW) <2011, Berlin>
International Conference on Indium Phosphide and Related Materials (IPRM) <23, 2011, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
1.55 µm electroabsorption-modulated laser (EML) devices designed for flip-chip mounting have been developed including a DFB laser, a butt joint coupled electroabsorption modulator (EAM), and a spot-size expander. Flip-chip mounting enables array-like arrangements of individually optimized discrete chips to be placed on optical PLC platforms like Silicon-on-Insulator (SOI) boards. The EMLs are based on the conventional InP/InGaAsP material system and rely on a buried heterostructure with Fe doped InP blocking. Large signal modulation at 25 Gb/s and 40Gb/s with high extinction ratio is demonstrated.

: http://publica.fraunhofer.de/dokumente/N-190165.html