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Monolithic flip-chip compatible twin-IQ Mach-Zehnder modulators for hybrid assembly onto high capacity optical transmitter boards

 
: Kaiser, R.; Velthaus, K.O.; Brast, T.; Maul, B.; Gruner, M.; Klein, H.; Hamacher, M.; Hoffmann, D.; Schell, M.

Institute of Electrical and Electronics Engineers -IEEE-:
Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 : 22-26 May 2011, Berlin
New York, NY: IEEE, 2011
ISBN: 978-1-4577-1753-6
4 S.
Compound Semiconductor Week (CSW) <2011, Berlin>
International Conference on Indium Phosphide and Related Materials (IPRM) <23, 2011, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
This paper reports on the first development, fabrication, and characterization of monolithic InP-based twin-IQ Mach-Zehnder modulator chips as basic building blocks for future high capacity and large scale planar optical Silica-on-Si transmitter boards. The monolithic devices are designed for hybrid assembly by utilizing passive chip alignment techniques in combination with flip-chip bonding technology. Electrical GSG and GS transmission lines have been integrated and connected on InP-based modulator chips for the first time. Very compact and low loss twin-IQ modulators have been demonstrated. Small signal response measurements taken on chip level reveal an overall data chip capacity of 100 Gb/s.

: http://publica.fraunhofer.de/dokumente/N-190164.html