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Compensation of mask induced aberrations by projector wavefront control

: Evanschitzky, Peter; Shao, Feng; Fühner, Tim; Erdmann, Andreas

Postprint urn:nbn:de:0011-n-1898089 (681 KByte PDF)
MD5 Fingerprint: 2650776db573812ad024b2436ad5f2fa
Copyright 2011 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Erstellt am: 24.2.2012

Dusa, M.V. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Optical microlithography XXIV. Vol.2 : 1 - 3 March 2011, San Jose, California, United States; part of SPIE advanced lithography
Bellingham, WA: SPIE, 2011 (Proceedings of SPIE 7973)
ISBN: 978-0-8194-8532-8
Paper 797329
Conference "Optical Microlithography" <24, 2011, San Jose/Calif.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
lithography simulation; mask topography effect; wavefront aberrations; process optimization

Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an aberration like impact on the imaging performance of lithographic projection systems. This paper demonstrates the application of advanced modeling and optimization methods for the compensation of mask induced aberration effects. It is shown that proper adjustment of the wavefront results in significant reduction of best focus differences between different features.