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20.1% efficient silicon solar cell with aluminum back surface field

 
: Fellmeth, T.; Mack, S.; Bartsch, J.; Erath, D.; Jäger, U.; Preu, R.; Clement, F.; Biro, D.

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Postprint urn:nbn:de:0011-n-1895588 (289 KByte PDF)
MD5 Fingerprint: c142a504b4f6dc3ba1d4437f1aa7030b
© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 23.5.2013


IEEE Electron Device Letters 32 (2011), Nr.8, S.1101-1103
ISSN: 0741-3106
ISSN: 0193-8576
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

Abstract
We present a standard p+pn+ solar cell device exhibiting a full-area aluminum back surface field (BSF) and a conversion efficiency of 20.1%. The front side features a shallow emitter which has been exposed to a short oxidation step and reduces the emitter dark saturation current density j0e to 160 fA/cm2 on a textured surface. The front contact is formed by light-induced nickel and silver plating. Also, devices featuring screen-printed front contacts have been realized that reach a conversion efficiency of 19.8%. PC1D simulations are presented in order to extract the electronic parameters of the BSF. Therefore, external quantum efficiency and reflectance have been determined for modeling the internal quantum efficiency by adapting surface recombination and lifetime of the PC1D-simulated silicon device. As a result, a recombination velocity of S BSF = 283 cm/s and a dark saturation current density of j BSF = 274 fA/cm2 in the Al BSF are determined. This results in an eff ective diffusion length Leff = 1150m.

: http://publica.fraunhofer.de/dokumente/N-189558.html