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20.1% efficient silicon solar cell with aluminum back surface field

: Fellmeth, T.; Mack, S.; Bartsch, J.; Erath, D.; Jäger, U.; Preu, R.; Clement, F.; Biro, D.

Postprint urn:nbn:de:0011-n-1895588 (289 KByte PDF)
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Erstellt am: 23.5.2013

IEEE Electron Device Letters 32 (2011), Nr.8, S.1101-1103
ISSN: 0741-3106
ISSN: 0193-8576
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

We present a standard p+pn+ solar cell device exhibiting a full-area aluminum back surface field (BSF) and a conversion efficiency of 20.1%. The front side features a shallow emitter which has been exposed to a short oxidation step and reduces the emitter dark saturation current density j0e to 160 fA/cm2 on a textured surface. The front contact is formed by light-induced nickel and silver plating. Also, devices featuring screen-printed front contacts have been realized that reach a conversion efficiency of 19.8%. PC1D simulations are presented in order to extract the electronic parameters of the BSF. Therefore, external quantum efficiency and reflectance have been determined for modeling the internal quantum efficiency by adapting surface recombination and lifetime of the PC1D-simulated silicon device. As a result, a recombination velocity of S BSF = 283 cm/s and a dark saturation current density of j BSF = 274 fA/cm2 in the Al BSF are determined. This results in an eff ective diffusion length Leff = 1150m.