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Accurate modeling of aluminum-doped silicon

 
: Rüdiger, M.; Rauer, M.; Schmiga, C.; Hermle, M.; Glunz, S.W.

:

Glunz, S.; Aberle, A.; Brendel, R.; Cuevas, A.; Hahn, G.; Poortmans, J.; Sinton, R.; Weeber, A.:
SiliconPV 2011 Conference, 1st International Conference on Crystalline Silicon Photovoltaics. Proceedings : Freiburg, Germany, 17.-21.04.2011
Amsterdam: Elsevier, 2011 (Energy Procedia 8, 2011)
ISSN: 1876-6102
S.527-532
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <1, 2011, Freiburg>
Englisch
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Dotierung und Diffusion; Herstellung und Analyse von hocheffizienten Solarzellen; Charakterisierung; Zellen und Module

Abstract
We present a detailed study on accurate modeling of highly aluminum-doped p+ silicon. We have analyzed the influence of defect recombination and the effect of incomplete ionization on the saturation current densities of Al-p+ regions featuring different Al doping profiles. Very good agreement within a broad range of experimental data has been obtained. We demonstrate that incomplete ionization has a significant impact on the doping profile characteristics and, therefore, has to be accounted for in accurate modeling of highly aluminum-doped silicon.

: http://publica.fraunhofer.de/dokumente/N-189446.html