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Classification of recombination active defect structures in multicrystalline silicon solar cells

: Lausch, D.; Petter, K.; Henke, B.; Bakowskie, R.; Schweizer, S.; Hagendorf, C.


Glunz, S.; Aberle, A.; Brendel, R.; Cuevas, A.; Hahn, G.; Poortmans, J.; Sinton, R.; Weeber, A.:
SiliconPV 2011 Conference, 1st International Conference on Crystalline Silicon Photovoltaics. Proceedings : Freiburg, Germany, 17.-21.04.2011
Amsterdam: Elsevier, 2011 (Energy Procedia 8, 2011)
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <1, 2011, Freiburg>
Fraunhofer CSP ()

In this contribution a classification of recombination active defects in multicrystalline silicon solar cells is introduced. On a macroscopic scale the classification is performed by using forward and reversed biased electroluminescence imaging (EL / ReBEL) and imaging of sub-band defect luminescence (ELsub). The luminescence behavior due to structural defects already present in the wafer can be divided into two groups based on their recombination and prebreakdown behavior. As a first step towards a more detailed analysis of the cause for these differences, the classification was also performed on microscopic scale. For this ReBEL and ELsub was performed under an optical microscope (ReBEL / ELsub) and EL was replaced by Electron Beam Induced Current (EBIC). The defect types observed on a macroscopic scale could also be observed on a microscopic scale; however, a third defect type had to be introduced. Finally we propose a qualitative model for the different classified t ypes of recombination active defect structures that can explain the observed recombination and prebreakdown behavior.