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Comprehensive characterization of advanced cell concepts with sub-micron resolution

: Gundel, P.; Drießen, M.; Bartsch, J.; Jäger, U.; Suwito, D.; Heinz, F.D.; Warta, W.; Schubert, M.C.

Volltext urn:nbn:de:0011-n-1894137 (826 KByte PDF)
MD5 Fingerprint: 2d084ef3bfadb3091b9aaa2e5cb6ae8d
Erstellt am: 20.12.2014

Glunz, S.; Aberle, A.; Brendel, R.; Cuevas, A.; Hahn, G.; Poortmans, J.; Sinton, R.; Weeber, A.:
SiliconPV 2011 Conference, 1st International Conference on Crystalline Silicon Photovoltaics. Proceedings : Freiburg, Germany, 17.-21.04.2011
Amsterdam: Elsevier, 2011 (Energy Procedia 8, 2011)
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <1, 2011, Freiburg>
Konferenzbeitrag, Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Siliciummaterialcharakterisierung; Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Charakterisierung; Zellen und Module

We introduce a comprehensive characterization approach of microscopic technological structures in advanced silicon cell concepts. Micro- photoluminescence spectroscopy and micro-Raman spectroscopy with their submicron resolution potential are applied, which allow a direct extraction of the most important parameters. These parameters are the micron resolved carrier lifetime, the doping density and the stress induced by the process. This paper covers exemplary measurements, which demonstrate the potential of this characterization approach for process optimization, details on the measurement techniques and on the sample preparation. The structures under test are laser doped back surface fields, nickel-plated contacts, back contact structures and epitaxial layers. The presented characterization techniques are able to reveal microscopic flaws in the technological structures and thus, allow for a direct and target-oriented optimization of the investigated processes.