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Reliability of nitrided gate oxides for N- and P-type 4H-SiC(0001) metal-oxide-semiconductor devices

: Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T.


Japanese Journal of Applied Physics. Part 1, Regular papers, short notes and review papers 50 (2011), Nr.9, Art. 090201
ISSN: 0021-4922
Fraunhofer IISB ()

In this paper, we have investigated reliability of n- and p-type 4H-SiC(0001) metal-oxide-semiconductor (MOS) devices with N2O-grown oxides and deposited oxides annealed in N2O. From the results of time-dependent dielectric breakdown (TDDB) tests, it is revealed that the N 2O-grown oxides have relatively-high reliability (4-30Ccm -2 for n- and p-MOS structures). In addition, the deposited SiO 2 on n- and p-SiC exhibited a high charge-to-breakdown of 70.0 and 54.9Ccm-2, respectively. The n/p-MOS structures with the deposited SiO2 maintained a high charge-tobreakdown of 19.9/15.1Ccm -2 even at 200 °C. The deposited SiO2 annealed in N2O has promise as the gate insulator for n- and p-channel 4HSiC(0001) MOS devices because of its high charge-to-breakdown and good interface properties.