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Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

: Müller, J.; Böscke, T.S.; Bräuhaus, D.; Schröder, U.; Böttger, U.; Sundqvist, J.; Kcher, P.; Mikolajick, T.; Frey, L.


Applied Physics Letters 99 (2011), Nr.11, Art. 112901
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Fraunhofer CNT ()

We report the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide. Hf0.5Zr0.5O2 thin films of 7.5 to 9.5 nm thickness were found to exhibit ferroelectric polarization-voltage hysteresis loops when integrated into TiN-based metal-insulator-metal capacitors. A remnant polarization of 16 C/cm2 and a high coercive field of 1 MV/cm were observed. Further proof for the ferroelectric nature was collected by quasi-static polarization-voltage hysteresis, small signal capacitance-voltage, and piezoelectric measurements. Data retention characteristics were evaluated by a Positive Up Negative Down pulse technique. No significant decay of the initial polarization state was observed within a measurement range of up to two days.