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Analysis of contaminated oxide-silicon interfaces

: Polignano, M.L.; Codegoni, D.; Castellano, L.; Greco, S.; Borionetti, G.; Bonoli, F.; Nutsch, A.; Altmann, R.; Leibold, A.; Otto, M.; Monge, P.; Riva, C.


Jantsch, W.:
Gettering and defect engineering in semiconductor technology XIV : Selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor, (GADEST2011), September 25 - 30, 2011, Loipersdorf (Fürstenfeld), Austria
Dürnten: Trans Tech Publications, 2011 (Solid state phenomena 178/179)
ISBN: 978-3-03-785232-3
International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST) <14, 2011, Loipersdorf>
Fraunhofer IISB ()

Methods for the analysis of the oxide-silicon interface were compared for their ability to reveal metal segregation at the interface and organic contamination. The impact of these contaminations on surface recombination velocity measurements, on capacitance vs. voltage, conductance vs. voltage and capacitance vs. time measurements and on MOS-DLTS spectra was studied. Niobium-contaminated wafers were used as an example of metal surface segregation, because it was previously shown that niobium is prone to surface segregation. Interface state density measurements obtained by the conductance method showed a limited impact of niobium implantation. Vice versa significant effects were found in MOS-DLTS spectra. For what concerns organic contamination, MOS-DLTS showed the most significant effects from the point-of-view of the intrinsic properties of the silicon oxide - silicon interface, and GOI tests demonstrate a clear impact of the organic contamination on MOS capacitors oxi de breakdown events.