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Determination of boron concentration in doped diamond films

: Demlow, S.N.; Grotjohn, T.A.; Hogan, T.; Becker, M.; Asmussen, J.


Nebel, C.E.; Bergonzo, P.; Butler, J.E.; Nesladek, M.; Wee, A.T. ; Materials Research Society -MRS-:
Diamond electronics and bioelectronics - fundamentals to application IV : Symposium held November 29 - December 3, Boston, Massachusetts, U.S.A.; Symposium A, "Diamond Electronics and Bioelectronics - Fundamentals to Applications IV," was held at the 2010 MRS fall meeting
Warrendale, Pa.: MRS, 2011 (Materials Research Society Symposium Proceedings 1282)
ISBN: 978-1-605-11259-6
ISBN: 1-605-11259-3
ISSN: 0272-9172
Symposium A "Diamond Electronics and Bioelectronics - Fundamentals to Application" <4, 2010, Boston/Mass.>
Materials Research Society (Fall Meeting) <2010, Boston/Mass.>
Fraunhofer ILT ()

The electrical characteristics of high quality single crystal boron-doped diamond are studied. Samples are synthesized in a high power-density microwave plasma-assisted chemical vapor deposition (CVD) reactor at a pressure of 160 Torr. The boron-doped diamond films are grown using diborane in the feedgas at concentrations of 0-0.25 ppm, and are compared to those grown previously with 1-10 ppm. The boron acceptor concentration is investigated using infrared absorption, and compared to the boron concentration obtained by SIMS. A four point probe is used to study the conductivity. The temperature dependent conductivity is analyzed to determine the boron dopant activation energy.