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2010
Conference Paper
Titel
Investigation of mask selectivities and diamond etching using microwave plasma-assisted etching
Abstract
Diamond etching is characterized using a microwave ECR plasma reactor with regard to etch rate selectivity, surface morphology, and feature size. Etching is performed on diamond substrates using a variety of etch mask materials including aluminum, titanium, gold, silicon dioxide and silicon nitride. The etch feed gases are combinations of oxygen, sulfur hexafluoride and argon. Aluminum masks provided the highest selectivity ratio of diamond etch rate to mask etch rate, both with and without SF6 in the oxygen/argon feedgas. Selectivity was not found to be dependent on mask feature size. Gold masks produced the least degree of micromasking.